B. Beklešovas “Formation and investigation of lead ferrite thin films doped by transition metals” doctoral dissertation defense

Author, Institution: Benas Beklešovas, Kaunas University of Technology

Science area, field of science: Technological Sciences, Materials Engineering, T008

Scientific Supervisor: Assoc. Prof. Dr. Vytautas Stankus (Kaunas University of Technology, Technological Sciences, Materials Engineering, T008)

Dissertation Defence Board of Materials Engineering Science Field:
Prof. Dr. Hab. Arvaidas Galdikas (Kaunas University of Technology, Technological Sciences, Materials Engineering, T008) – chairperson
Chief Researcher Šarūnas Meškinis (Kaunas University of Technology, Technological Sciences, Materials Engineering, T008)
Assoc. Prof. Dr. Teresa Moskaliovienė (Kaunas University of Technology, Natural Sciences, Physics, N002)
Assoc. Prof. Dr. Žilvinas Rinkevičius (Royal Institute of Technology, Sweden, Technological Sciences, Materials Engineering, T008)
Chief Researcher Vitas Valinčius (Lithuanian Energy Institute, Natural Sciences, Physics, N002)

Dissertation defence meeting will be at Rectorate Hall of Kaunas University of Technology (K. Donelaičio 73 – 402, Kaunas)

The doctoral dissertation is available at the library of Kaunas University of Technology (K. Donelaičio 20, Kaunas)

Annotation: The dissertation focuses on analyzing the influence of synthesis temperature and doping materials on the structure, dielectric, and magnetic properties of lead ferrite (Pb₂Fe₂O₅) thin films synthesized by the reactive magnetron deposition method. Multiferroics, characterized by possessing multiple primary ferroic properties, hold great potential for advanced computer memory technologies, sensors, photovoltaic technologies, and high-tech electronics. Among various approaches, doping presents an effective method for modifying parameters of thin films, including remnant polarization, magnetization, and their interrelationship. The study investigates thin films of lead ferrite doped with transition metals (chromium, cobalt, niobium, and nickel), synthesized using the reactive magnetron deposition method at synthesis temperatures ranging from 500 to 600 °C. The research findings demonstrate that the doped PFO thin films exhibit ferroelectric and magnetic properties at room temperature. Manipulating the concentration of dopants and adjusting the synthesis temperature enables the amplification of remnant polarization and the alteration of thin film growth dynamics. Furthermore, the study highlights the significant influence of synthesis temperature on the efficient formation of PFO phases, resulting in improved ferroelectric and magnetic properties.