Vertical organic light-emitting transistors based on thermally-activated-delayed-fluorescence emitters

   

Project no.: 01.2.2-LMT-K-718-01-0015

Project description:

Organic light-emitting transistors (OLETs) have a high potential of usage due to combination of both emission and switching functions. Despite the usage of emitters exhibiting thermally activated delayed fluorescence (TADF) in OLEDs allowed to achieve 100% of maximum internal quantum efficiency, TADF emitters have not been used in vertical OLET (VOLET) structures so far. The aim of the project is to develop VOLETs utilizing new TADF emitters that will allow to outmatch the light-emitting parameters of OLETs achieved up to now. In addition, colour-tuneable white emission of VOLETs is the target of the project. New TADF emitters with high charge carrier mobilities of both holes and electrons, high (>60%) luminescence quantum yields in the solid-state suitable for VOLETs will be developed. The application of such TAFD emitters in VOLET structures will afford external quantum efficiency higher than 5%.

Project funding:

This research project is funded by the European Regional Development Fund according to the 2014–2020 Operational Programme for the European Union Funds’ Investments, under measure’s No. 01.2.2-LMT-K-718 activity “Research Projects Implemented by World-class Researcher Groups to develop R&D activities relevant to economic sectors, which could later be commercialized”.


Project results:

In the frame of the project highly effective organic semiconductors exhibiting thermally activated delayed fluorescence will be synthesized High-efficiency vertical organic light-emitting transistors based on organic semiconductors exhibiting thermally activated delayed fluorescence will be developed.

Period of project implementation: 2017-12-20 - 2021-12-19

Project coordinator: Kaunas University of Technology

Head:
Juozas Vidas Gražulevičius

Duration:
2017 - 2021

Department:
Department of Polymer Chemistry and Technology, Faculty of Chemical Technology