The main goal of the project is to investigate the role of ionicity by performing epitaxy of gallium nitride via graphene on ionic oxides. The potential field of application of the proposed approach is in the fabrication of high-quality III-group nitride layers on foreign substrates. We expect to manipulate the potential field by changing the orientation and lattice constants of cubic oxides below graphene. Graphene on insulating ionic oxides can act as a transparent 2D electrode combining two semiconductors together: Si substrate and GaN epitaxial thin film.
Project funding:
Projects funded by the Research Council of Lithuania (RCL), Projects carried out by researchers’ teams
Project results:
–
Period of project implementation: 2023-04-01 - 2026-03-31
Project coordinator: Vilnius University
Project partners: Kaunas University of Technology
