The graphene is one of the most prominent 2D nanomaterials. It exhibits very interesting properties. Particularly, phenomenal electron and hole mobilities, charge multiplication, flexibility, transparency, chemical inertness can be mentioned. Graphene is an excellent Schottky contact material: graphene and silicon Schottky contact (heterojunction) infrared (IR) radiation photodetectors (photodiodes) exhibits large sensitivity (an order of magnitude larger than any other metal/Si Schottky contact photodiode to date). Graphene Schottky contacts are formed on silicon by transfer method. Graphene is grown on Cu and Ni foil or is exfoliated. The next step is long graphene transfer process on semiconductor or insulator surface. It is complicated technology which inhibits control of graphene/silicon contact properties. In the present work experiments on amorphous carbon transition to graphene will be conducted by heating amorphous carbon and nickel nanocomposites (instead of heating amorphous carbon and nickel bilayer).
The aim of this research is to investigate influence of heating on amorphous carbon and nickel nanocomposite structure and application of such method for direct synthesis of graphene as well as formation of the graphene (carbon) and silicon diodes.
Project results:
Carbon and nickel nanocomposites of the different structure and composition will be formed by using magnetron sputtering technique.
To achieve direct graphene synthesis on semiconductor substrates, Raman scattering spectroscopy will be used to investigate annealing effects on carbon phase structure.
Selected samples will be used to form graphene and silicon (carbon) diodes (heterojunctions). Diode electric and photoelectric properties will be investigated.
Period of project implementation: 2018-10-31 - 2019-05-01
Project coordinator: Kaunas University of Technology
